dm p6050sfg document number: d s 37378 rev. 1 - 2 1 of 6 www.diodes.com october 2014 ? diodes incorporated d mp6050sfg advance information powerdi is a registered trademark of diodes incorporated . new product 60v p - channel enhancement mode mosfet powerdi ? product summary v (br)dss r ds(on) max i d max t a = + 25c - 6 0v 5 0 m ? @ v gs = - 10 v - 4.8 a 70 m ? @ v gs = - 4.5 v - 4. 1 a description and applications this mosfet has been designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? backlighting ? power m anagement f unctions ? dc - dc converters features and benefits ? low r ds(on) C e nsu res o n s tate l osses a re m inimized ? small f orm f actor t hermally e fficient p ackage e nables h igher d ensity e nd p roducts ? occupies j ust 33% of t he b oard a rea o ccupied by so - 8 e nabling s maller e nd p roduct ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) mechanical data ? case: p ower di ? 3333 - 8 ? case mate rial: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections indicator: see d iagram ? terminals: finish ? matte tin a nnealed over copper l eadframe . solderable per mil - std - 202, method 208 ? weight: 0.0 72 grams ( a pproximate ) ordering information (note 4 ) part number case packaging dm p 605 0s fg - 7 powerdi ? 3333 - 8 20 00 /tape & reel dm p605 0s fg - 13 powerd i ? 3333 - 8 3000 /tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging detai ls, go to our website at http // www.diodes.com/products/packages.html . marking information top view bottom view p ower di ? 3333 - 8 p55 = product type marking code yyww = date code marking yy = last d igit of y ear (ex: 1 4 = 201 4 ) ww = week c ode (01 to 53) equivalent circuit p55 y yww s s s g d d d d pin 1 d s g
dm p6050sfg document number: d s 37378 rev. 1 - 2 2 of 6 www.diodes.com october 2014 ? diodes incorporated d mp6050sfg advance information powerdi is a registered trademark of diodes incorporated . new product maximum ratings @t a = + 25c , unless otherwise specified . characteristic symbol value unit drain - source voltage v dss - 6 0 v gate - source volta ge v gss 20 v continuous drain current (note 6 ) v gs = - 10 v steady state t a = + 25c t a = + 70c i d - 4.8 - 3.9 a t<10s t a = + 25c t a = + 70c i d - 6. 0 - 4.8 a pulsed drain curren t ( 10 ? dm - 32 a maximum continuous body diode f orward current (note 6 ) i s - 2.8 a avalanche current (note 7 ) l = 0. 1 mh i a s - 24.8 a repetitive avalanche energy (note 7 ) l = 0. 1 mh e a s 30.8 mj thermal characteristics @t a = + 25c , unless otherwise specified . characteristic symbol value unit total power diss ipation (note 5 ) p d 1.1 w thermal resistance, junction to ambient (note 5 ) s teady state r ? ja 118 c/w t<10s 78 total power dissipation (note 6 ) p d 1.8 w thermal resistance, junction to ambient (note 6 ) s teady state r ? ja 71 c/w t<10s 46 thermal resistance, junction to case (note 6 ) r ? j c 6.7 operating and storage temperature range t j, t stg - 55 to +150 c e lectrical characteristics @ t a = + 25c , unless otherwise specified . characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss - 6 0 gs = 0v, i d = - 250 a j = +25c i dss ds = - 6 0 v, v gs = 0v gate - source leakage i gss gs = 20 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs( th ) - 1.0 ds = v gs , i d = - 250 a ds (on) gs = - 10 v, i d = - 5 a gs = - 4 .5 v, i d = - 4 a diode forward voltage v sd gs = 0v, i s = - 1 a dynamic characteristics (note 9 ) input capacitance c iss ds = - 3 0 v , v gs = 0v , f = 1.0mhz output capacitance c oss rss g ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = - 4.5 v ) q g ds = - 3 0 v, i d = - 5 a total gat e charge ( v gs = - 10 v ) q g gs gd d( on ) gs = - 10 v , v ds = - 3 0 v , r g = 3 d = - 5 a turn - on rise time t r d( off ) f rr ? ? f = - 5 a, di/dt = 1 0 0a/s rr ? ? f = - 5 a, di/dt = 1 0 0a/s notes: 5 . device mounted on fr - 4 pc boa rd, with minimum recommended pad layout, single sided. 6. device mounted on fr - 4 substrate pc board, 2oz copper, with thermal b ias to bottom layer 1inch square copper plate . 7 . i a s and e a s rating are based on low frequency and duty cycles to keep t j = + 25 c . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
dm p6050sfg document number: d s 37378 rev. 1 - 2 3 of 6 www.diodes.com october 2014 ? diodes incorporated d mp6050sfg advance information powerdi is a registered trademark of diodes incorporated . new product 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage ( v) fig ure 1 typical output characteristic v gs = - 2.8v v gs = - 3.0v v gs = - 3.5v v gs = - 4.0v v gs = - 4.5v v gs = - 5.0v v gs = - 10.0v 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i d , drain current (a) v gs , gate - source voltage ( v) figure 2 typical transfer characteristic v ds = - 5.0v t a = - 55 t a =+25 t a =+85 t a =+125 t a =+150 t a =+175 0.000 0.010 0.020 0.030 0.040 0.050 0.060 0.070 0.080 0.090 0.100 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ? ) i d , drain - source current (a) figure 3 typical on - resistance vs. drain current and gate voltage v gs = - 4.5v v gs = - 10v 0 0.05 0.1 0.15 0.2 0.25 0.3 0 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain - source on - resistance ( ? ) v gs , gate - source voltage ( v) figure 4 typical transfer characteristic i d = - 7a i d = - 5a 0 0.02 0.04 0.06 0.08 0.1 0.12 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ? ) i d , drain current (a) figure 5 typical on - resistance vs. drain current and temperature v gs = - 4.5v t a = - 55 t a =+25 t a =+85 t a =+125 t a =+150 t a =+175 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( ) figure 6 on - resistance variation with temperature v gs = - 4.5v, i d = - 5a v gs = - 10v, i d = - 10a
dm p6050sfg document number: d s 37378 rev. 1 - 2 4 of 6 www.diodes.com october 2014 ? diodes incorporated d mp6050sfg advance information powerdi is a registered trademark of diodes incorporated . new product 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - esistance ( ? j , junction temperature ( v gs = - 4.5v, i d = - 5a v gs = - 10v, i d = - 10a 0 0.5 1 1.5 2 2.5 3 - 50 - 25 0 25 50 75 100 125 150 175 v g s(th) , gate threshold voltage (v) t j , junction temperature ( i d = - 250 ? a i d = - 1ma 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9 diode forward voltage vs. current v gs =0v, t a = - 55 v gs =0v, t a =+25 v gs =0v, t a =+85 v gs =0v, t a =+125 v gs =0v, t a =+150 v gs =0v, t a =+175 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c t , junction capacitance (pf) v ds , drain - source voltage ( v) figure 10 typical junction capacitance f=1mhz c rss c oss c iss 0 2 4 6 8 10 0 5 10 15 20 25 v gs , ga te - source voltage (v) qg, total gate charge (nc) v ds = - 30v, i d = - 5a figure 11 gate charge 0.01 0.1 1 10 100 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12 soa, safe operation area t j , (max) =+150 a =+25 gs =10v r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms p w =100 ? s
dm p6050sfg document number: d s 37378 rev. 1 - 2 5 of 6 www.diodes.com october 2014 ? diodes incorporated d mp6050sfg advance information powerdi is a registered trademark of diodes incorporated . new product package outline dimensions please see ap0200 2 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 0.001 0.01 0.1 1 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13 transient thermal resistance r ja (t)=r(t) * r ja r ja =118 o c/w duty cycle, d=t1 / t2 d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.7 d=0.9 powerdi ? 3333 - 8 dim min max typ d 3.25 3.35 3.30 e 3.25 3.35 3.30 d2 2.22 2.32 2.27 e2 1.56 1.66 1.61 a 0.75 0.85 0.80 a1 0 0.05 0.02 a3 ? ? ? ? b 0.27 0.37 0.32 b2 ? ? ? ? l 0.35 0.45 0.40 l1 ? ? ? ? e ? ? ? ? z ? ? ? ? all dimensions in mm dimensions value (in mm) c 0.650 g 0.230 g1 0.420 y 3.700 y1 2.250 y2 1.850 y3 0.700 x 2.370 x2 0.420 a a1 a3 d d2 e e2 b2 (4x) l (4x) l1 (3x) b (8x) e z (4x) pin 1 id 1 4 8 5 x y y1 y3 y2 x2 c 1 4 8 5 g g1
dm p6050sfg document number: d s 37378 rev. 1 - 2 6 of 6 www.diodes.com october 2014 ? diodes incorporated d mp6050sfg advance information powerdi is a registered trademark of diodes incorporated . new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied wa rranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or oth er changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appli cations shall assume all risks of such use and will agree to hold diodes incorporated and al l the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. pr oduct names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written appro val of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when prop erly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evic es or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or syste ms, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its representatives against any damages arising out of the use of diode s incorporated products in such safety - critical, life support devices or systems. copyright ? 201 4 , diodes incorporated www.diodes.com
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